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PD - 9.1617A
PRELIMINARY
IRF3315S/L
HEXFET ? Power MOSFET
l
Advanced Process Technology
l
l
Surface Mount (IRF3315S)
Low-profile through-hole (IRF3315L)
D
V DSS = 150V
l
l
l
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
R DS(on) = 0.082 ?
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3315L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
S
D 2 P ak
Max.
I D = 21A
T O -26 2
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V ?
21
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
15
84
3.8
94
0.63
± 20
350
12
9.4
2.5
A
W
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
–––
1.6
40
°C/W
11/7/97
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相关代理商/技术参数
IRF3315STRRPBF 功能描述:MOSFET 150V 1 N-CH HEXFET 82mOhms 63.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF331R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA
IRF332 制造商:International Rectifier 功能描述:
IRF332R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA
IRF333 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS
IRF333R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA
IRF340 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) TO-204AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 10A 2PIN TO-204AA - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET 400V 10A TO-204 制造商:International Rectifier 功能描述:MOSFET N TO-3 制造商:International Rectifier 功能描述:N CH MOSFET, 400V, 10A, TO-204AA; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:400V; On Resistance Rds(on):550mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:2;RoHS Compliant: No
IRF340-343 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 10A, 350V/400V